| Category | Power MOSFET |
| | Channel Mode | Enhancement |
| | Channel Type | N |
| | Configuration | Single |
| | Dimensions | 10.41 x 4.7 x 9.01mm |
| | Height | 9.01mm |
| | Length | 10.41mm |
| | Maximum Continuous Drain Current | 8 A |
| | Maximum Drain Source Resistance | 0.85 Ω |
| | Maximum Drain Source Voltage | 500 V |
| | Maximum Gate Source Voltage | ±20 V |
| | Maximum Operating Temperature | +150 °C |
| | Maximum Power Dissipation | 125 W |
| | Minimum Operating Temperature | -55 °C |
| | Mounting Type | Through Hole |
| | Number of Elements per Chip | 1 |
| | Package Type | TO-220AB |
| | Pin Count | 3 |
| | Typical Gate Charge @ Vgs | 63 nC@ 10 V |
| | Typical Input Capacitance @ Vds | 1300 pF@ 25 V |
| | Typical Turn-Off Delay Time | 49 ns |
| | Typical Turn-On Delay Time | 14 ns |
| | Width | 4.7mm |